Shinsuke Harada - Concepedia

Author

Shinsuke Harada

National Institute of Advanced Industrial Science and Technology ORCID

Also Known As

Okamoto, Dai, S. Harada, Shinsuke Harada

277

Publications

3.1K

Citations

H-Index

Concepts

All Affiliations

National Institute of Advanced Industrial Science and Technology University of Tsukuba Fuji Electric (Japan)Toshiba (Japan)Kyoto University

About

Shinsuke Harada is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	77	2.4K
2	Electrical Engineering	28	67	2.1K
3	Applied Physics	27	60	2K
4	Chemical Engineering	3	3	83
5	Computer Engineering	3	3	58

Shinsuke Harada

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Characterization of traps at nitrided SiO<sub>2</sub>/SiC interfaces near the conduction band edge by using Hall effect measurements Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani, Applied Physics Express	2017	125
Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, IEEE Electron Device Letters SemiconductorsB AtomsElectrical EngineeringSemiconductor TechnologyEngineering	2014	124
Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada, IEEE Electron Device Letters Electrical EngineeringInversion Channel MobilityEngineeringNanoelectronics4H-sic Mosfet	2002	105
Development of Ultrahigh-Voltage SiC Devices Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi, IEEE Transactions on Electron Devices SemiconductorsUltrahigh VoltageElectrical EngineeringSemiconductor TechnologyEngineering	2014	94
Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor Shinsuke Harada, Ryoji Kosugi, Junji Senzaki, Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2002	79
Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS Yusuke Kobayashi, Naoyuki Ohse, Tadao Morimoto, Electrical EngineeringBody PinEngineeringSbd-wall-integrated Trench MosfetHigh Voltage Engineering	2017	73
3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field Shinsuke Harada, Yusuke Kobayashi, Keiko Ariyoshi, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2016	72
First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth Method Shinsuke Harada, Yusuke Kobayashi, Shinya Kyogoku, Body DiodeEngineeringKv-class SuperjunctionMulti-epitaxial Growth MethodSemiconductor Device	2018	72
High channel mobility in normally-off 4H-SiC buried channel MOSFETs Shinsuke Harada, S. Suzuki, Junji Senzaki, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringGate OxideEngineeringApplied Physics	2001	61
Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, Journal of Applied Physics Materials EngineeringTemperature-dependent AnalysisElectrical EngineeringEngineeringPhysics	2015	59

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