Shinsuke Harada

Characterization of traps at nitrided SiO₂/SiC interfaces near the conduction band edge by using Hall effect measurements

Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani et al. · Applied Physics Express · 2017 · 125 citations · Full text

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Dai Okamoto, Mitsuru Sometani, Shinsuke Harada et al. · IEEE Electron Device Letters · 2014 · 124 citations

Semiconductors, B Atoms, Electrical Engineering +13

Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face

Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada et al. · IEEE Electron Device Letters · 2002 · 105 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +11

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 94 citations

Semiconductors, Ultrahigh Voltage, Electrical Engineering +14

Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Shinsuke Harada, Ryoji Kosugi, Junji Senzaki et al. · Journal of Applied Physics · 2002 · 79 citations

Semiconductor Technology, Electrical Engineering, Engineering +8