Ryoji Kosugi

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Dai Okamoto, Mitsuru Sometani, Shinsuke Harada et al. · IEEE Electron Device Letters · 2014 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face

Junji Senzaki, Kazutoshi Kojima, Shinsuke Harada et al. · IEEE Electron Device Letters · 2002 · 105 citations

Engineering, Electrical Engineering, Materials Science +16

Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

Ryoji Kosugi, T. Umeda, Yoshiki Sakuma · Applied Physics Letters · 2011 · 85 citations · Full text

Engineering, Materials Engineering, Materials Science +17

First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method

Ryoji Kosugi, Yuuki Sakuma, Kazutoshi Kojima et al. · 2014 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor

Shinsuke Harada, Ryoji Kosugi, Junji Senzaki et al. · Journal of Applied Physics · 2002 · 80 citations

Engineering, Electrical Engineering, Materials Science +17