Dai Okamoto

Publications

1.1K

Citations

H-Index

2009

Active since

Affiliations

National Institute of Advanced Industrial Science and Technology(Current)

University of Tsukuba

Nara Institute of Science and Technology

Fuji Electric (Japan)

Kyoto University

Dai Okamoto is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, electrical engineering, and applied physics.

ORCID

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsNanoelectronicsMaterial SciencePower ElectronicsMaterials EngineeringPower SemiconductorsPhysics

Publications per year

2009–2022

Publications

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Dai Okamoto, Hiroshi Yano, Kenji Hirata et al. · IEEE Electron Device Letters · 2010 · 300 citations

Materials Science, Semiconductors, Electrical Engineering +14

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama et al. · Applied Physics Letters · 2010 · 145 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Characterization of traps at nitrided SiO<sub>2</sub>/SiC interfaces near the conduction band edge by using Hall effect measurements

Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani et al. · Applied Physics Express · 2017 · 125 citations · Full text

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Dai Okamoto, Mitsuru Sometani, Shinsuke Harada et al. · IEEE Electron Device Letters · 2014 · 124 citations

Semiconductors, B Atoms, Electrical Engineering +13

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada et al. · Journal of Applied Physics · 2015 · 59 citations · Full text

Materials Engineering, Temperature-dependent Analysis, Electrical Engineering +13

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