Characterization of traps at nitrided SiO₂/SiC interfaces near the conduction band edge by using Hall effect measurements

Abstract

The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces\nnear the conduction band edge were qualitatively examined by a simple, newly\ndeveloped characterization method that utilizes Hall effect measurements and\nsplit capacitance-voltage measurements. The results showed a significant\nreduction in the density of interface traps near the conduction band edge by\nnitridation, as well as the high density of interface traps that was not\neliminated by nitridation.\n