Yoshiyuki Yonezawa

Publications

2.1K

Citations

H-Index

1968

Active since

Affiliations

National Institute of Advanced Industrial Science and Technology(Current)

Fuji Electric (Japan)

Hiroshima Institute of Technology

Kyoto University

Caldwell University

Yoshiyuki Yonezawa is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, electrical engineering, and applied physics.

ORCID

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsMaterial SciencePower ElectronicsMaterials EngineeringPhysicsPower SemiconductorsHigh Voltage Engineering

Publications per year

1968–2021

Publications

Characterization of traps at nitrided SiO<sub>2</sub>/SiC interfaces near the conduction band edge by using Hall effect measurements

Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani et al. · Applied Physics Express · 2017 · 125 citations · Full text

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Dai Okamoto, Mitsuru Sometani, Shinsuke Harada et al. · IEEE Electron Device Letters · 2014 · 124 citations

Semiconductors, B Atoms, Electrical Engineering +13

Current status and perspectives of ultrahigh-voltage SiC power devices

Tsunenobu Kimoto, Yoshiyuki Yonezawa · Materials Science in Semiconductor Processing · 2017 · 113 citations

Electrical Engineering, Engineering, Power Device +5

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Takehiko Tawara, Tetsuya Miyazawa, Mina Ryo et al. · Journal of Applied Physics · 2016 · 111 citations

Semiconductors, Materials Science, Electrical Engineering +12

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata et al. · Journal of Applied Physics · 2016 · 99 citations

Shockley Type, Electrical Engineering, Forward Degradation +15

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