Mina Ryo

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Takehiko Tawara, Tetsuya Miyazawa, Mina Ryo et al. · Journal of Applied Physics · 2016 · 111 citations

Semiconductors, Materials Science, Electrical Engineering +12

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata et al. · Journal of Applied Physics · 2016 · 99 citations

Shockley Type, Electrical Engineering, Forward Degradation +15

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

Takehiko Tawara, Shinichiro Matsunaga, Takumi Fujimoto et al. · Journal of Applied Physics · 2018 · 69 citations

4H-sic Pin Diodes, Semiconductor Technology, Electrical Engineering +13

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki et al. · Japanese Journal of Applied Physics · 2018 · 41 citations

Semiconductor Technology, Basal-plane Dislocation, Electrical Engineering +13

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

Aoi Okada, Johji Nishio, Ryosuke Iijima et al. · Japanese Journal of Applied Physics · 2018 · 33 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +10