Shohei Hayashi

Superlattices of PbZrO3 and PbTiO3 prepared by multi-ion-beam sputtering

Isaku Kanno, Shohei Hayashi, Ryoichi Takayama et al. · Applied Physics Letters · 1996 · 145 citations

Materials Science, Materials Engineering, Multiferroics +12

A new power flow model and solution methodߞIncluding load and generator characteristics and effects of system control devices

Masami Okamura, Yoshifumi Ōura, Shohei Hayashi et al. · IEEE Transactions on Power Apparatus and Systems · 1975 · 83 citations

Engineering, Power Engineering, Power System Dynamics +16

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki et al. · Japanese Journal of Applied Physics · 2018 · 41 citations

Semiconductor Technology, Basal-plane Dislocation, Electrical Engineering +13

Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes

Shohei Hayashi, T. Naijo, Tamotsu Yamashita et al. · Applied Physics Express · 2017 · 28 citations

Semiconductor Technology, Electrical Engineering, Origin Analysis +14

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Yuichiro Tokuda, Takako Yamashita, I. Kamata et al. · Journal of Applied Physics · 2017 · 26 citations

Materials Science, Engineering, Expansion Behavior +13