I. Kamata - Concepedia

Author

I. Kamata

Central Research Institute of Electric Power Industry

Also Known As

I Kamata, I. Kamata

Publications

649

Citations

H-Index

Concepts

All Affiliations

Central Research Institute of Electric Power Industry National Institute of Advanced Industrial Science and Technology Kyoto University State University of New York Stony Brook University

About

I. Kamata is an author at Central Research Institute of Electric Power Industry specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	570
2	Applied Physics	11	12	570
3	Electrical Engineering	4	4	220
4	Natural Sciences	1	1	45
5	Chemistry	1	1	45

I. Kamata

Publications

612

Citations

H-Index

Page 1

	Year	Citations
Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers Syunsuke Izumi, Hidekazu Tsuchida, I. Kamata, Applied Physics Letters Materials ScienceIn-grown Stacking FaultsFault DensityEpitaxial GrowthEngineering	2005	110
Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth Hidekazu Tsuchida, I. Kamata, Masahiro Nagano Journal of Crystal Growth Electrical EngineeringEpitaxial GrowthEngineeringApplied PhysicsCondensed Matter Physics	2007	82
Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching Hidekazu Tsuchida, I. Kamata, Masahiro Nagano Journal of Crystal Growth Materials EngineeringElectrical EngineeringEngineeringDefect Selective EtchingApplied Physics	2007	77
Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor Hidekazu Tsuchida, I. Kamata, Tamotsu Jikimoto, Journal of Crystal Growth Materials EngineeringEngineeringApplied PhysicsSemiconductor Device FabricationEpitaxial Growth	2002	71
Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography I. Kamata, Masahiro Nagano, Hidekazu Tsuchida, Journal of Crystal Growth EngineeringEdge DislocationsDislocation InteractionMechanical EngineeringApplied Physics	2008	59
A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature Tomonori Nakamura, Toshiyuki Miyanagi, I. Kamata, IEEE Electron Device Letters Materials EngineeringElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2005	46
Infrared spectroscopy of hydrides on the 6H-SiC surface Hidekazu Tsuchida, I. Kamata, Kunikazu Izumi Applied Physics Letters Materials ScienceSurface CharacterizationSharp Si–hEngineeringHydrogen Annealing	1997	45
Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001) surfaces Hidekazu Tsuchida, I. Kamata, Kunikazu Izumi Journal of Applied Physics	1999	42
Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing Yuichiro Tokuda, Takako Yamashita, I. Kamata, Journal of Applied Physics Materials ScienceEngineeringExpansion BehaviorCrystalline DefectsDsf Expansion	2017	26
Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC Ryohei Tanuma, I. Kamata, Jason Paul Hadorn, Journal of Applied Physics Materials SciencePhotonicsOptical MaterialsEdge DislocationsEngineering	2018	17

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