Publication | Closed Access
Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth
82
Citations
11
References
2007
Year
Electrical EngineeringEpitaxial GrowthEngineeringApplied PhysicsCondensed Matter PhysicsDefect FormationSemiconductor Device Fabrication4H-sic Epitaxial GrowthCarbide
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