Masahiro Nagano

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata et al. · physica status solidi (b) · 2009 · 161 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Recent advances in 4H-SiC epitaxy for high-voltage power devices

Hidekazu Tsuchida, Isaho Kamata, Tetsuya Miyazawa et al. · Materials Science in Semiconductor Processing · 2017 · 83 citations

Electrical Engineering, Engineering, Power Device +4

Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

Hidekazu Tsuchida, I. Kamata, Masahiro Nagano · Journal of Crystal Growth · 2007 · 82 citations

Electrical Engineering, Epitaxial Growth, Engineering +6

Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

Hidekazu Tsuchida, I. Kamata, Masahiro Nagano · Journal of Crystal Growth · 2007 · 77 citations

Materials Engineering, Electrical Engineering, Engineering +8

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

I. Kamata, Masahiro Nagano, Hidekazu Tsuchida et al. · Journal of Crystal Growth · 2008 · 59 citations

Engineering, Edge Dislocations, Dislocation Interaction +8