Isaho Kamata

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata et al. · physica status solidi (b) · 2009 · 167 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers

Isaho Kamata, Xuan Zhang, Hidekazu Tsuchida · Applied Physics Letters · 2010 · 90 citations

Natural Sciences, Materials Engineering, Materials Science +17

Recent advances in 4H-SiC epitaxy for high-voltage power devices

Hidekazu Tsuchida, Isaho Kamata, Tetsuya Miyazawa et al. · Materials Science in Semiconductor Processing · 2017 · 87 citations

Engineering, Materials Engineering, Materials Science +16

Annealing effects on single Shockley faults in 4H-SiC

Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata et al. · Applied Physics Letters · 2006 · 84 citations

Engineering, Materials Engineering, Materials Science +13

Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto et al. · Japanese Journal of Applied Physics · 2000 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +17