Isaho Kamata

Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique

Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata et al. · physica status solidi (b) · 2009 · 161 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers

Isaho Kamata, Xuan Zhang, Hidekazu Tsuchida · Applied Physics Letters · 2010 · 87 citations

Materials Science, Semiconductors, Epitaxial Growth +15

Recent advances in 4H-SiC epitaxy for high-voltage power devices

Hidekazu Tsuchida, Isaho Kamata, Tetsuya Miyazawa et al. · Materials Science in Semiconductor Processing · 2017 · 83 citations

Electrical Engineering, Engineering, Power Device +4

Annealing effects on single Shockley faults in 4H-SiC

Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata et al. · Applied Physics Letters · 2006 · 80 citations

Epitaxial Growth, Engineering, Single Shockley Faults +12

Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto et al. · Japanese Journal of Applied Physics · 2000 · 73 citations

Materials Science, Materials Engineering, Epitaxial Growth +13