Toshiyuki Miyanagi

Annealing effects on single Shockley faults in 4H-SiC

Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata et al. · Applied Physics Letters · 2006 · 80 citations

Epitaxial Growth, Engineering, Single Shockley Faults +12

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Tomonori Nakamura, Toshiyuki Miyanagi, I. Kamata et al. · IEEE Electron Device Letters · 2005 · 46 citations

Materials Engineering, Electrical Engineering, Engineering +13

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata et al. · Materials science forum · 2005 · 41 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi et al. · Japanese Journal of Applied Physics · 2005 · 28 citations

Materials Science, Materials Engineering, Low Bpd Density +14

8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation

Koji Nakayama, Yoshitaka Sugawara, Hidekazu Tsuchida et al. · Materials science forum · 2005 · 17 citations

4H-sic Pin Diodes, Electrical Engineering, Semiconductor Device +9