Yoshitaka Sugawara

Annealing effects on single Shockley faults in 4H-SiC

Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata et al. · Applied Physics Letters · 2006 · 80 citations

Epitaxial Growth, Engineering, Single Shockley Faults +12

6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop

Yoshitaka Sugawara, Katsunori Asano, Ranbir Singh et al. · Materials science forum · 2000 · 55 citations

Power Device, Power Semiconductor Device, 4H-sic Pin Diode

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata et al. · Materials science forum · 2005 · 41 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face

Hiroshi Yano, Toshio Hirao, Tsunenobu Kimoto et al. · Materials science forum · 2000 · 33 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +7

Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi et al. · Japanese Journal of Applied Physics · 2005 · 28 citations

Materials Science, Materials Engineering, Low Bpd Density +14