Yoshitaka Sugawara - Concepedia

Author

Yoshitaka Sugawara

Kansai Electric Power (Japan)

Also Known As

Yoshitaka SUGAWARA, Yoshitaka Sugawara

Publications

433

Citations

H-Index

Concepts

All Affiliations

Kansai Electric Power (Japan)Central Research Institute of Electric Power Industry Cree (China)Kyoto University

About

Yoshitaka Sugawara is an author at Kansai Electric Power (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	296
2	Electrical Engineering	8	8	177
3	Applied Physics	7	7	227
4	Materials Engineering	4	4	97
5	Materials Science	4	4	97

Yoshitaka Sugawara

Publications

351

Citations

H-Index

Page 1

	Year	Citations
Annealing effects on single Shockley faults in 4H-SiC Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Applied Physics Letters Epitaxial GrowthEngineeringSingle Shockley FaultsPhysicsCrystalline Defects	2006	80
6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop Yoshitaka Sugawara, Katsunori Asano, Ranbir Singh, Materials science forum Power DevicePower Semiconductor Device4H-sic Pin Diode	2000	55
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Materials science forum Materials ScienceMaterials EngineeringElectrical EngineeringEpitaxial GrowthEngineering	2005	41
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face Hiroshi Yano, Toshio Hirao, Tsunenobu Kimoto, Materials science forum Electrical EngineeringInversion Channel MobilityEngineeringBias Temperature InstabilityApplied Physics	2000	33
Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations Hidekazu Tsuchida, Isaho Kamata, Toshiyuki Miyanagi, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringLow Bpd DensitySemiconductor TechnologyEngineering	2005	28
5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm<sup>2</sup> Yoshitaka Sugawara, Katsunori Asano, Daisuke Takayama, Materials science forum Electrical EngineeringEngineeringPhysicsPower Semiconductor DeviceLow Rons	2002	22
SiC Devices for High Voltage High Power Applications Yoshitaka Sugawara Materials science forum Electrical EngineeringSic DevicesEngineeringPower DevicePower Semiconductor Device	2004	19
High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes Tsunenobu Kimoto, N. Miyamoto, Adolf Schöner, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductor TechnologyEngineering	2002	17
3.6 kV 4H-SiC JBS Diodes with Low RonS Yoshitaka Sugawara, Katsunori Asano, Ryuichi Saito Materials science forum Electrical EngineeringEngineeringHigh Voltage EngineeringPower DevicePower Semiconductor Device	2000	17
8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation Koji Nakayama, Yoshitaka Sugawara, Hidekazu Tsuchida, Materials science forum 4H-sic Pin DiodesElectrical EngineeringSemiconductor DeviceForward Voltage DegradationEngineering	2005	17

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