Katsunori Asano

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

Electric Field Effect on the Al-MgO-YBa₂Cu₃O_y Structure

Uki Kabasawa, Katsunori Asano, Takeshi Kobayashi · Japanese Journal of Applied Physics · 1990 · 56 citations

Natural Sciences, Materials Engineering, Materials Science +17

6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop

Yoshitaka Sugawara, Katsunori Asano, Ranbir Singh et al. · Materials science forum · 2000 · 55 citations · Full text

Engineering, Electrical Engineering, Materials Science +9

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata et al. · Materials science forum · 2005 · 42 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Characteristics of a 4H-SiC Pin Diode With Carbon Implantation/Thermal Oxidation

Koji Nakayama, Atsushi Tanaka, M. Nishimura et al. · IEEE Transactions on Electron Devices · 2012 · 37 citations

Engineering, Electrical Engineering, Materials Science +17