Tadayoshi Deguchi

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 94 citations

Semiconductors, Ultrahigh Voltage, Electrical Engineering +14

Low V<inf>f</inf> and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka et al. · 2013 · 32 citations

Engineering, Mosfet Structure, Power Electronic Systems +17

High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

Tadayoshi Deguchi, Manabu Arai, Kimiyoshi Yamasaki et al. · IEEE Electron Device Letters · 2012 · 24 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa et al. · 2014 · 21 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +13

Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

Tadayoshi Deguchi, Tomonori Mizushima, Hiroyuki Fujisawa et al. · 2014 · 13 citations

Engineering, Power Electronics, P-channel Igbt +16