Concepedia

Author

Tomonori Mizushima

Fuji Electric (Japan)

Also Known As

T. Mizushima, Tomonori Mizushima

21

Publications

291

Citations

9

H-Index

14

Concepts

All Affiliations

Fuji Electric (Japan)National Institute of Advanced Industrial Science and TechnologyKansai Electric Power (Japan)Kyoto UniversityNikki-Universal (Japan)
TM

About

Tomonori Mizushima is an author at Fuji Electric (Japan) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

9

9

272

2

Electrical Engineering

9

9

272

3

Applied Physics

6

6

193

4

Electronic Devices

3

3

46

5

Computer Engineering

1

1

12

Tomonori Mizushima

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9

Publications

272

Citations

9

H-Index

YearCitations

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi,

IEEE Transactions on Electron Devices

2014

94

Low V<inf>f</inf> and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka,

2013

32

Dynamic Behavior of a Medium-Voltage <italic>N</italic>-Channel SiC-IGBT With Ultrafast Switching Performance of 300 kV/μs

K. Koseki, Yoshiyuki Yonezawa, Tomonori Mizushima,

IEEE Transactions on Industry Applications

2018

27

27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Koji Nakayama, Tomonori Mizushima, Kensuke Takenaka,

2018

27

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka,

Materials science forum

2015

25

Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

Tomonori Mizushima, Kensuke Takenaka, Hiroyuki Fujisawa,

2014

21

High voltage SOI P-channel field MOSFET structures

David Hongfei Lu, Tomonori Mizushima, Hitoshi Sumida,

IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

2009

21

Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

Tadayoshi Deguchi, Tomonori Mizushima, Hiroyuki Fujisawa,

2014

13

Retrograded Channel SOI LIGBTs with Enhanced Safe Operating Area

David Hongfei Lu, Tomonori Mizushima, Akio Kitamura,

2008

12

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