Tomonori Mizushima

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 94 citations

Semiconductors, Ultrahigh Voltage, Electrical Engineering +14

Low V<inf>f</inf> and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka et al. · 2013 · 32 citations

Engineering, Mosfet Structure, Power Electronic Systems +17

Dynamic Behavior of a Medium-Voltage <italic>N</italic>-Channel SiC-IGBT With Ultrafast Switching Performance of 300 kV/μs

K. Koseki, Yoshiyuki Yonezawa, Tomonori Mizushima et al. · IEEE Transactions on Industry Applications · 2018 · 27 citations

Semiconductor Technology, Ultrafast Switching Performance, Electrical Engineering +14

27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Koji Nakayama, Tomonori Mizushima, Kensuke Takenaka et al. · 2018 · 27 citations

Space-modulated Jte, Electrical Engineering, Semiconductor Device +10

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka et al. · Materials science forum · 2015 · 25 citations

Large Device, Engineering, Power Devices +16