Kensuke Takenaka

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Takehiko Tawara, Tetsuya Miyazawa, Mina Ryo et al. · Journal of Applied Physics · 2016 · 118 citations

Engineering, Electrical Engineering, Materials Science +17

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

Takehiko Tawara, Shinichiro Matsunaga, Takumi Fujimoto et al. · Journal of Applied Physics · 2018 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Long-Range-Ordered Anodic Porous Alumina with Less-Than-30 nm Hole Interval

Hideki Masuda, Kensuke Takenaka, Tomohiro Ishii et al. · Japanese Journal of Applied Physics · 2006 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +15

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Shuji Katakami, Hiroyuki Fujisawa, Kensuke Takenaka et al. · Materials science forum · 2013 · 40 citations · Full text

Engineering, Electrical Engineering, Materials Science +17