Shinichiro Matsunaga

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Takehiko Tawara, Tetsuya Miyazawa, Mina Ryo et al. · Journal of Applied Physics · 2016 · 118 citations

Engineering, Electrical Engineering, Materials Science +17

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Mitsuo Okamoto, Tadayoshi Deguchi et al. · IEEE Transactions on Electron Devices · 2014 · 95 citations

Engineering, Electrical Engineering, Materials Science +17

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

Takehiko Tawara, Shinichiro Matsunaga, Takumi Fujimoto et al. · Journal of Applied Physics · 2018 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties

Shinichiro Matsunaga, S. Yoshida, Takayuki Kawaji et al. · Journal of Applied Physics · 2004 · 44 citations

Engineering, Materials Engineering, Materials Science +17

Low V<inf>f</inf> and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

Yoshiyuki Yonezawa, Tomonori Mizushima, Kensuke Takenaka et al. · 2013 · 32 citations

Engineering, Electrical Engineering, Materials Science +14