Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

Abstract

To examine the effect of the device structure on the on-state voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> ), several types of ultrahigh-voltage 4H-SiC p-channel insulated-gate bipolar transistors (IGBTs) were fabricated. A p-channel IGBT with a retrograde charge storage layer (CSL) and an additional JFET ion implantation region exhibited the lowest V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> at 200 °C. To obtain a blocking voltage (BV) greater than 13 kV, a junction termination extension (JTE)-dose dependence of the BV was also investigated. Furthermore, ampere-class p-channel IGBTs with optimized device structures were fabricated for the evaluation of the switching loss (5 kV/1 A). Although the turn-off loss increased with an increase in the temperature, the loss remained as low as less than 10 mJ up to 250 °C. This performance renders the ultrahigh-voltage 4H-SiC p-channel IGBTs suitable for high-temperature and high-power applications.