Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

Abstract

4H-SiC carbon face flip-type n-channel implantation and epitaxial (IE)-IGBT with an epitaxial p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> substrate was developed and its switching test was carried out. We were able to achieve an ultrahigh blocking voltage greater than 16 kV, extremely low V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> (6.35 V at 20 A), and good temperature stability. The switching operation was achieved by connecting three IGBTs in parallel, with a total I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE</inf> of 60 A and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE</inf> 5 kV. The turn-off loss and turn-on loss were about 220 mJ and 120 mJ, respectively at room temperature. They show low switching loss of ultrahigh voltage SiC IE-IGBT and the possibility of large scale module with parallel connection.