Mitsuru Sometani

Characterization of traps at nitrided SiO₂/SiC interfaces near the conduction band edge by using Hall effect measurements

Tetsuo Hatakeyama, Yuji Kiuchi, Mitsuru Sometani et al. · Applied Physics Express · 2017 · 125 citations · Full text

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

Dai Okamoto, Mitsuru Sometani, Shinsuke Harada et al. · IEEE Electron Device Letters · 2014 · 124 citations

Semiconductors, B Atoms, Electrical Engineering +13

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada et al. · Journal of Applied Physics · 2015 · 59 citations · Full text

Materials Engineering, Temperature-dependent Analysis, Electrical Engineering +13

Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy

T. Umeda, G.-W. Kim, Takafumi Okuda et al. · Applied Physics Letters · 2018 · 55 citations

Engineering, Carbon Dangling-bond Defects, Silicon On Insulator +16

Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

Takuji Hosoi, Daisuke Nagai, Mitsuru Sometani et al. · Applied Physics Letters · 2016 · 50 citations

Materials Science, Materials Engineering, High Temperature Materials +14