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Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
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Electrical EngineeringInversion Channel MobilityEngineeringBias Temperature InstabilityApplied PhysicsPower Semiconductor DeviceSemiconductor Device FabricationMicroelectronics6H-sic MosfetsSemiconductor Device
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