Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations

Abstract

We investigate basal plane dislocations (BPDs) in thick 4H–SiC(0001) epilayers and the formation of stacking faults in the active region of pin diodes. Synchrotron reflection X-ray topography shows that epitaxial growth on (0001) is advantageous in preventing the propagation of BPDs from the substrate into the epilayer and obtaining a low BPD density in the epilayer compared with growth on (0001). The current stress test of 4H–SiC(0001) pin diodes demonstrates the suppressed formation of stacking faults.