Tamotsu Jikimoto

Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto et al. · Japanese Journal of Applied Physics · 2000 · 73 citations

Materials Science, Materials Engineering, Epitaxial Growth +13

Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Hidekazu Tsuchida, I. Kamata, Tamotsu Jikimoto et al. · Journal of Crystal Growth · 2002 · 71 citations

Materials Engineering, Engineering, Applied Physics +5

A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

Tomonori Nakamura, Toshiyuki Miyanagi, I. Kamata et al. · IEEE Electron Device Letters · 2005 · 46 citations

Materials Engineering, Electrical Engineering, Engineering +13

Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto et al. · Japanese Journal of Applied Physics · 2002 · 34 citations

Materials Engineering, Materials Science, Engineering +11

Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto et al. · Japanese Journal of Applied Physics · 2001 · 20 citations

Materials Science, Materials Engineering, Electrical Engineering +11