Tamotsu Jikimoto - Concepedia

Author

Tamotsu Jikimoto

Central Research Institute of Electric Power Industry

Also Known As

T Jikimoto, T. Jikimoto, Tamotsu JIKIMOTO, Tamotsu Jikimoto

Publications

394

Citations

H-Index

Concepts

All Affiliations

Central Research Institute of Electric Power Industry

About

Tamotsu Jikimoto is an author at Central Research Institute of Electric Power Industry specializing in applied physics, engineering, and materials engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	283
2	Applied Physics	8	8	283
3	Materials Engineering	7	7	271
4	Materials Science	4	4	137
5	Electrical Engineering	3	3	76

Tamotsu Jikimoto

Publications

283

Citations

H-Index

Page 1

	Year	Citations
Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringEpitaxial Growth4H-sic SubstratesEngineering	2000	73
Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor Hidekazu Tsuchida, I. Kamata, Tamotsu Jikimoto, Journal of Crystal Growth Materials EngineeringEngineeringApplied PhysicsSemiconductor Device FabricationEpitaxial Growth	2002	71
A 4.15 kV 9.07-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature Tomonori Nakamura, Toshiyuki Miyanagi, I. Kamata, IEEE Electron Device Letters Materials EngineeringElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2005	46
Influence of 4H-SiC Growth Conditions on Micropipe Dissociation Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceEngineeringMicropipe DissociationMechanical Engineering	2002	34
Improvement in Electrical Properties of 4H-SiC Epilayers by Micropipe Dissociation Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringPoor ReverseEngineering	2001	20
LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Materials science forum Materials EngineeringEngineeringApplied PhysicsMolecular Beam EpitaxyEpitaxial Growth	2000	17
Interface States in Abrupt SiO<sub>2</sub>/4H- and 6HSiC(0001) from First-Principles: Effects of Si Dangling Bonds, C Dangling Bonds and C Clusters Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto Materials science forum EngineeringPhysicsInterface StatesSi Dangling BondsChemical Bond	2004	12
Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Materials science forum Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringApplied Physics	2002	10

Page 1