Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, Gerhard Pensl, H. Matsunami et al. · physica status solidi (a) · 1997 · 426 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Step-Controlled Epitaxial Growth of High-Quality SiC Layers

Tsunenobu Kimoto, Akira Itoh, H. Matsunami · physica status solidi (b) · 1997 · 157 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of SiC by ?Hot-Wall? CVD and HTCVD

Olof Kordina, C. Hallin, Anne Henry et al. · physica status solidi (b) · 1997 · 127 citations

Engineering, Materials Engineering, Materials Science +15

Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto et al. · Japanese Journal of Applied Physics · 2000 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +17

Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R)

Ch. Haberstroh, R. Helbig, René Stein · Journal of Applied Physics · 1994 · 71 citations

Natural Sciences, Materials Engineering, Materials Science +17