Influence of 4H-SiC Growth Conditions on Micropipe Dissociation

Abstract

In this study, we investigated the influence of 4H–SiC growth conditions on micropipe dissociation. The C/Si ratio of the reactant gases for chemical vapor deposition (CVD) epitaxial growth has a major influence on the probability of micropipe dissociation. A high probability of micropipe dissociation of over 98% was successfully obtained at a low C/Si ratio. We also investigated the surface morphology of 4H–SiC epilayers around dissociated and continuous micropipes grown under different C/Si growth conditions.