Tamotsu Yamashita

Contrast analysis of Shockley partial dislocations in 4H-SiC observed by synchrotron Berg–Barrett X-ray topography

Hirofumi Matsuhata, Tamotsu Yamashita, Toshiaki Tanaka et al. · The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics · 2014 · 42 citations

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes

Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki et al. · Japanese Journal of Applied Physics · 2018 · 41 citations

Semiconductor Technology, Basal-plane Dislocation, Electrical Engineering +13

Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes

Shohei Hayashi, T. Naijo, Tamotsu Yamashita et al. · Applied Physics Express · 2017 · 28 citations

Semiconductor Technology, Electrical Engineering, Origin Analysis +14

Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H–SiC p-i-n diodes

Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki et al. · Applied Physics Express · 2019 · 24 citations

Semiconductor Technology, Electrical Engineering, Basal-plane Dislocation +10

Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing

Hideki Sako, Tamotsu Yamashita, Kentaro Tamura et al. · Materials science forum · 2014 · 23 citations

Engineering, Mechanical Engineering, Electron Microscopy +18