Hirofumi Matsuhata - Concepedia

Author

Hirofumi Matsuhata

National Institute of Advanced Industrial Science and Technology ORCID

Also Known As

H Matsuhata, H. Matsuhata, Hirofumi MATSUHATA, Hirofumi Matsuhata, Hirofumi Matsuhata Hirofumi Matsuhata

195

Publications

3.3K

Citations

H-Index

Concepts

All Affiliations

National Institute of Advanced Industrial Science and Technology National Institute for Materials Science The University of Tokyo Showa Denko (Japan)Tokyo University of Science

About

Hirofumi Matsuhata is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	66	2K
2	Applied Physics	24	62	1.9K
3	Electrical Engineering	16	24	697
4	Chemistry	6	6	172
5	Natural Sciences	3	3	87

Hirofumi Matsuhata

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Effect of Structural Parameters on Superconductivity in Fluorine-Free LnFeAsO<sub>1-<i>y</i></sub> (Ln = La, Nd) Chul‐Ho Lee, Akira Iyo, Hiroshi Eisaki, Journal of the Physical Society of Japan	2008	603
Quantum-size effects on radiative lifetimes and relaxation of excitons in semiconductor nanostructures J. Bellessa, V. Voliotis, R. Grousson, Physical review. B, Condensed matter Localized Excited StateEngineeringExcitation Energy TransferRelaxation BottleneckSemiconductor Nanostructures	1998	124
Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates Xu‐Qiang Shen, Hirofumi Matsuhata, Hajime Okumura Applied Physics Letters Materials ScienceMaterials EngineeringVicinal SapphireVicinal AngleEngineering	2005	108
Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata, Journal of Applied Physics Shockley TypeElectrical EngineeringForward DegradationEdge DislocationsPhysics	2016	99
Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate Xue‐Lun Wang, Mutsuo Ogura, Hirofumi Matsuhata Applied Physics Letters Wide-bandgap SemiconductorEngineeringAlgaas/gaas Quantum WiresAlgaas/gaas QwrOptoelectronic Devices	1995	93
Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? –Bi as a Surfactant with Small Self-Incorporation– Kunihiro Sakamoto, Ken'ichi Kyoya, Kazushi Miki, Japanese Journal of Applied Physics Surface CharacterizationEngineeringSurface ChemistryNanotechnologySurface Analysis	1993	90
<i>T</i><sub>c</sub> vs <i>n</i> Relationship for Multilayered High-<i>T</i><sub>c</sub> Superconductors Akira Iyo, Y. Tanaka, Yasuharu Kodama, Journal of the Physical Society of Japan Hgba 2High T CSuperconducting MaterialEngineeringBismuth-based Superconductors	2007	72
Structural phase transition accompanied by metal-insulator transition in PrRu<sub>4</sub>P<sub>12</sub> Chul‐Ho Lee, Hirofumi Matsuhata, Atsushi Yamamoto, Journal of Physics Condensed Matter	2000	61
Surface defects and accompanying imperfections in 4H–SiC: Optical, structural and electrical characterization Bin Chen, Hirofumi Matsuhata, Takashi Sekiguchi, Acta Materialia Materials ScienceSemiconductor TechnologyEngineeringSurface DefectsApplied Physics	2011	60
High spatial resolution spectroscopy of a single V-shaped quantum wire J. Bellessa, V. Voliotis, R. Grousson, Applied Physics Letters Categoryquantum ElectronicsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1997	56

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