Naoyuki Kawabata

Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh et al. · Applied Physics Letters · 2009 · 116 citations

Engineering, Materials Engineering, Materials Science +17

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Atsushi Tanaka, Hirofumi Matsuhata, Naoyuki Kawabata et al. · Journal of Applied Physics · 2016 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced Interfacial-Nucleation in Al-Induced Crystallization for (111) Oriented Si_1–<i>x</i>Ge<i>_x</i>(0 ≤<i>x</i>≤ 1) Films on Insulating Substrates

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh et al. · ECS Journal of Solid State Science and Technology · 2012 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Au-Induced Low-Temperature (∼250°C) Crystallization of Si on Insulator Through Layer-Exchange Process

Jong-Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata et al. · Electrochemical and Solid-State Letters · 2011 · 32 citations

Engineering, Materials Engineering, Materials Science +17

Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth

Masashi Kurosawa, Kaoru Toko, Naoyuki Kawabata et al. · Solid-State Electronics · 2011 · 29 citations

Natural Sciences, Materials Engineering, Materials Science +17