Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Kaoru Toko, Isakane Nakao, Taizoh Sadoh, +2

Solid-State Electronics

Materials ScienceGlass-ceramicElectrical EngineeringEngineeringGlass-forming Liquid +8

Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, +1

Applied Physics Letters

Si FilmsEngineeringThin Film Process TechnologySilicon On InsulatorOrientation-controlled Si Films +16

Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

Taizoh Sadoh, Hayato Kamizuru, Atsushi Kenjo, +1

Applied Physics Letters

Poly-ge Thin-film TransistorNige Schottky Source/drainEngineeringOptoelectronic DevicesThin Film Process Technology +14

Epitaxial ferromagnetic Fe3Si∕Si(111) structures with high-quality heterointerfaces

Kohei Hamaya, K. Ueda, Yutaka Kishi, +3

Applied Physics Letters

Magnetic PropertiesEngineeringSpintronic MaterialSilicon On InsulatorMagnetic Materials +15

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

K. Yamane, Kohei Hamaya, Yasunobu Ando, +4

Applied Physics Letters

Materials ScienceSchottky Barrier HeightEngineeringTunneling MicroscopyPhysics +13

Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

Hiroshi Kanno, Kaoru Toko, Taizoh Sadoh, +1

Applied Physics Letters

Materials ScienceEngineeringCrystalline DefectsSpontaneous NucleationAmorphous Sige +13

High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth

Masanobu Miyao, Kaoru Toko, Takanori Tanaka, +1

Applied Physics Letters

Materials ScienceElectrical EngineeringSemiconductor DeviceEngineeringElectronic Materials +13

High carrier mobility in orientation-controlled large-grain (≥50 <i>μ</i>m) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

Jong-Hyeok Park, Kenji Kasahara, Kohei Hamaya, +2

Applied Physics Letters

Ge CrystalsSevere Plastic DeformationEngineeringLow Hole ConcentrationCrystal Growth Technology +16

Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C)

Jong-Hyeok Park, Tsuneharu Suzuki, Masashi Kurosawa, +2

Applied Physics Letters

EngineeringCrystal Growth TechnologySolid-state ChemistryChemistryNucleation-controlled Gold-induced-crystallization +17

Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

Hajime Watakabe, Toshiyuki Sameshima, Hiroshi Kanno, +2

Journal of Applied Physics

Optical MaterialsEngineeringLaser ApplicationsOptoelectronic DevicesSilicon On Insulator +21