A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram

Masanori Hosomi, H. Yamagishi, Tatsuya Yamamoto, +9

SpintronicsMagnetismElectrical EngineeringEngineeringNon-volatile Memory +12

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

K. Yamane, Kohei Hamaya, Yasunobu Ando, +4

Applied Physics Letters

Materials ScienceSchottky Barrier HeightEngineeringTunneling MicroscopyPhysics +13

Spin accumulation created electrically in an <i>n</i>-type germanium channel using Schottky tunnel contacts

Kenji Kasahara, Yuzo Baba, K. Yamane, +6

Journal of Applied Physics

EngineeringSpin SystemsMagnetic ResonanceSpintronic MaterialSpin Dynamic +18

Thermal activation effect on spin transfer switching in magnetic tunnel junctions

Y. Higo, K. Yamane, Kazuhiro Ohba, +4

Applied Physics Letters

MagnetismSpintronicsElectrical EngineeringEngineeringTunneling Microscopy +13

Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Yuichiro Ando, Kenji Kasahara, K. Yamane, +6

Applied Physics Letters

Spin Accumulation SignalsEngineeringSilicon ChannelMagnetic ResonanceElectrical Detection +15

CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications

D. Shum, D. Houssameddine, S. T. Woo, +35

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +16

JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications

V. B. Naik, K. Yamane, Tae Young Lee, +41

Fd-soi 40MbNon-volatile MemoryEngineeringIntegrated CircuitsMulti-channel Memory Architecture +14

22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications

K. Lee, K. Yamane, V. B. Naik, +28

MagnetismElectrical Engineering22-Nm Fd-soi 40MbEngineeringVlsi Design +11

Spin-dependent single-electron-tunneling effects in epitaxial Fe nanoparticles

F. Ernult, K. Yamane, Seiji Mitani, +4

Applied Physics Letters

EngineeringDouble Tunnel JunctionsTunnel Magnetoresistance OscillationsMagnetic ResonanceMagnetoresistance +16

22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity

K. Lee, K. Yamane, S. M. Noh, +36

MagnetismElectrical EngineeringEnhanced Magnetic ImmunityEflash ApplicationsEngineering +13