Kazuhiro Ohba

A Novel Resistance Memory with High Scalability and Nanosecond Switching

Katsuhisa Aratani, Kazuhiro Ohba, T. Mizuguchi et al. · 2007 · 129 citations

Engineering, Electrical Engineering, Materials Science +15

Thermal activation effect on spin transfer switching in magnetic tunnel junctions

Y. Higo, K. Yamane, Kazuhiro Ohba et al. · Applied Physics Letters · 2005 · 62 citations

Natural Sciences, Electrical Engineering, Materials Science +16

Magnetoresistive random access memory operation error by thermally activated reversal (invited)

Tetsuya Yamamoto, Hiroshi Kano, Y. Higo et al. · Journal of Applied Physics · 2005 · 32 citations

Engineering, Computer Engineering, Electrical Engineering +14

MRAM with improved magnetic tunnel junction material

Hiroshi Kano, K. Bessho, Y. Higo et al. · IEEE International Digest of Technical Papers on Magnetics Conference · 2003 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +17

Visualization of Conductive Filament during Write and Erase Cycles on Nanometer-Scale ReRAM Achieved by In-Situ TEM

Yasuo Takahashi, Masaki Kudo, Ichiro Fujiwara et al. · 2015 · 12 citations

Engineering, Electrical Engineering, Materials Science +17