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Thermal activation effect on spin transfer switching in magnetic tunnel junctions
62
Citations
6
References
2005
Year
MagnetismSpintronicsElectrical EngineeringEngineeringTunneling MicroscopyPhysicsNanoelectronicsMagnetic Tunnel JunctionsApplied PhysicsCondensed Matter PhysicsSpin TransferIntrinsic Spin TransferThermal Activation EffectSpintronic MaterialSpin DynamicThermal StabilityMagnetoresistanceCurrent Ic0
A calculation of the intrinsic spin transfer switching current Ic0 is realized in the magnetic tunnel junctions (MTJs). Ic0 is determined by the distribution of Ic in repeated measurements, assuming the linear decrease of the thermal stability by increasing the spin-polarized current. The spin transfer torque is found to be proportional to η(I)I with the applied current I and I-dependent spin polarization η(I). Even in case that I is limited less than Ic due to the tunnel barrier breakdown, Ic0 is calculated with an assisting external magnetic field and making better use of the magnetic phase diagram. In our MTJs, the average intrinsic switching current density was 6.4MA∕cm2.
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