Epitaxial ferromagnetic Fe3Si∕Si(111) structures with high-quality heterointerfaces

Abstract

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe3Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130°C, we realize the epitaxial growth of ferromagnetic Fe3Si layers on Si(111) with an abrupt interface, and the grown Fe3Si layer has the ordered DO3 phase. Measurements of magnetic and electrical properties for the Fe3Si∕Si(111) yield a magnetic moment of ∼3.16μB∕f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of ∼1.08, respectively.