Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Kaoru Toko, Isakane Nakao, Taizoh Sadoh, +2

Solid-State Electronics

Materials ScienceGlass-ceramicElectrical EngineeringEngineeringGlass-forming Liquid +8

Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

Masakazu Baba, Katsuaki Toh, Kaoru Toko, +7

Journal of Crystal Growth

Electrical EngineeringEpitaxial GrowthGrain BoundariesEngineeringTransmission Electron Microscopy +9

High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer

Hiromasa Murata, Yoshiki Nakajima, Noriyuki Saitoh, +3

Scientific Reports

Effect of amorphous Si capping layer on the hole transport properties of BaSi2 and improved conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells

Suguru Yachi, Ryota Takabe, Hiroki Takeuchi, +2

Applied Physics Letters

EngineeringConversion EfficiencySemiconductor MaterialsOptoelectronic DevicesThin Film Process Technology +17

Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

Kaoru Toko, Ryohei Numata, Oya N, +3

Applied Physics Letters

Materials ScienceMaterials EngineeringAl-induced CrystallizationEngineeringElectronic Materials +12

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Kaoru Toko, Masashi Kurosawa, Noriyuki Saitoh, +4

Applied Physics Letters

Materials ScienceAl-induced CrystallizationElectrical EngineeringEngineeringNanoelectronics +11

Determination of Bulk Minority-Carrier Lifetime in BaSi₂Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

Kosuke O. Hara, Noritaka Usami, Kotaro Nakamura, +4

Applied Physics Express

Thin Film PhysicsEngineeringDrastic EnhancementBulk Minority-carrier LifetimeThin Film Process Technology +15

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Kaoru Toko, Ryota Yoshimine, Kenta Moto, +1

Scientific Reports

Giant Ge-on-Insulator Formation by Si–Ge Mixing-Triggered Liquid-Phase Epitaxy

Masanobu Miyao, Takanori Tanaka, Kaoru Toko, +1

Applied Physics Express

Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringGiant Single-crystalline Ge-on-insulator +8

Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates

Yoko Yasutomi, Keita Ito, Tatsunori Sanai, +2

Journal of Applied Physics

Magnetic PropertiesPerpendicular Magnetic AnisotropyEngineeringMagnetic MaterialsMagnetoresistance +15