Masashi Kurosawa

Germanene Epitaxial Growth by Segregation through Ag(111) Thin Films on Ge(111)

Junji Yuhara, H. Shimazu, Kouichi Ito et al. · ACS Nano · 2018 · 143 citations

Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation

Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh et al. · Applied Physics Letters · 2009 · 116 citations

Si Films, Engineering, Thin Film Process Technology +18

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Kaoru Toko, Masashi Kurosawa, Noriyuki Saitoh et al. · Applied Physics Letters · 2012 · 97 citations

Materials Science, Al-induced Crystallization, Electrical Engineering +13

High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization

Wakana Takeuchi, Noriyuki Taoka, Masashi Kurosawa et al. · Applied Physics Letters · 2015 · 75 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °C)

Jong-Hyeok Park, Tsuneharu Suzuki, Masashi Kurosawa et al. · Applied Physics Letters · 2013 · 69 citations

Engineering, Crystal Growth Technology, Solid-state Chemistry +19