Atsushi Kenjo

Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

Taizoh Sadoh, Hayato Kamizuru, Atsushi Kenjo et al. · Applied Physics Letters · 2006 · 99 citations

Engineering, Electrical Engineering, Materials Science +14

Ni-imprint induced solid-phase crystallization in Si1−xGex (x: 0–1) on insulator

Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo et al. · Applied Physics Letters · 2007 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomically controlled molecular beam epitaxy of ferromagnetic silicide Fe3Si on Ge

Taizoh Sadoh, Mamoru Kumano, Ryo Kizuka et al. · Applied Physics Letters · 2006 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +12

Deep level of iron-hydrogen complex in silicon

Taizoh Sadoh, Kazuyoshi Tsukamoto, Akira Baba et al. · Journal of Applied Physics · 1997 · 42 citations

Natural Sciences, Materials Science, Physics +17

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2

Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo et al. · Applied Physics Letters · 2003 · 37 citations

Engineering, Materials Engineering, Materials Science +17