Applied Physics Letters · 1995 · 93 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsHeterostructure DevicesLateral ConfinementLow-temperature GrowthMetalorganic Chemical Vapor DepositionPhotoluminescencePhotoluminescence SpectroscopyQuantum WiresSemiconductor Nanowires
Flow rate modulation epitaxy (FME) is applied to the low-temperature growth of AlGaAs/GaAs quantum wires (QWRs) on nonplanar substrates. The growth selectivity is found to be enhanced greatly by the use of FME, as compared with the conventional metalorganic chemical vapor deposition due to the enhanced migration of Ga species. An AlGaAs/GaAs QWR with a central thickness of about 9 nm and a lateral width of about 28 nm is grown at 600 °C on a V-grooved substrate. Good photoluminescence properties are observed from the grown QWR, with the peak energy being in good agreement with the calculated energy level of a parabolic shape lateral confinement potential.