Tomoaki Hatayama

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Dai Okamoto, Hiroshi Yano, Kenji Hirata et al. · IEEE Electron Device Letters · 2010 · 300 citations

Materials Science, Semiconductors, Electrical Engineering +14

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama et al. · Applied Physics Letters · 2010 · 145 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Field-test analysis of PV system output characteristics focusing on module temperature

Kensuke Nishioka, Tomoaki Hatayama, Yukiharu Uraoka et al. · Solar Energy Materials and Solar Cells · 2003 · 137 citations

Electrical Engineering, Module Temperature, Engineering +10

Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

Hiroshi Yano, Natsuko Kanafuji, Ai Osawa et al. · IEEE Transactions on Electron Devices · 2014 · 113 citations

Semiconductors, Electrical Engineering, 4H-sic Mosfets +11

Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node

Atsushi Miura, Takio Hikono, Takashi Matsumura et al. · Japanese Journal of Applied Physics · 2005 · 97 citations

Engineering, Emerging Memory Technology, Biomedical Engineering +19