Tomoaki Hatayama - Concepedia

Author

Tomoaki Hatayama

Nara Institute of Science and Technology

Also Known As

Kawakita, A., Ogane, A., T Hatayama, T. HATAYAMA, T. Hatayama, Taiji Hatayama, Tomoaki HATAYAMA, Tomoaki Hatayama, Tomoaki Hatayama Tomoaki Hatayama

194

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

Nara Institute of Science and Technology Kyoto University Panasonic (Japan)National Institute of Advanced Industrial Science and Technology Nagoya Institute of Technology

About

Tomoaki Hatayama is an author at Nara Institute of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	64	2.1K
2	Applied Physics	22	58	1.8K
3	Natural Sciences	2	2	49
4	Health Sciences	1	1	27
5	Biomedical Engineering	1	1	97

Tomoaki Hatayama

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide Dai Okamoto, Hiroshi Yano, Kenji Hirata, IEEE Electron Device Letters Materials ScienceSemiconductorsElectrical EngineeringInversion Channel MobilityEngineering	2010	300
Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsNear-interface Traps	2010	145
Field-test analysis of PV system output characteristics focusing on module temperature Kensuke Nishioka, Tomoaki Hatayama, Yukiharu Uraoka, Solar Energy Materials and Solar Cells Electrical EngineeringModule TemperatureEngineeringSolar PowerRooftop Photovoltaics	2003	137
Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides Hiroshi Yano, Natsuko Kanafuji, Ai Osawa, IEEE Transactions on Electron Devices SemiconductorsElectrical Engineering4H-sic MosfetsEngineeringStress-induced Leakage Current	2014	113
Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node Atsushi Miura, Takio Hikono, Takashi Matsumura, Japanese Journal of Applied Physics EngineeringEmerging Memory TechnologyBiomedical EngineeringInorganic NanodotNanocomputing	2005	97
Thermal Analysis of Degradation in Ga<sub>2</sub>O<sub>3</sub>–In<sub>2</sub>O<sub>3</sub>–ZnO Thin-Film Transistors Mami N. Fujii, Hiroshi Yano, Tomoaki Hatayama, Japanese Journal of Applied Physics Electrical EngineeringElectronic DevicesEngineeringVertical Electric FieldOxide Electronics	2008	82
Hot Carrier Analysis in Low-TemperaturePoly-Si TFTs Using Picosecond Emission Microscope Yukiharu Uraoka, N. Hirai, Hiroshi Yano, IEEE Transactions on Electron Devices EngineeringSilicon On InsulatorSemiconductor DeviceOptical PropertiesNanoelectronics	2004	58
Anomalously anisotropic channel mobility on trench sidewalls in 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors fabricated on 8° off substrates Hiroshi Yano, Hiroshi Nakao, Hidenori Mikami, Applied Physics Letters SemiconductorsTrench SidewallsElectrical EngineeringSemiconductor TechnologyEngineering	2007	56
SiC photoelectrodes for a self-driven water-splitting cell Tomonari Yasuda, Masashi Kato, M. Ichimura, Applied Physics Letters Materials SciencePhotoelectrochemical PropertiesElectrical EngineeringChemical EngineeringEngineering	2012	54
Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors Yukiharu Uraoka, Tomoaki Hatayama, Takashi Fuyuki, Japanese Journal of Applied Physics Electrical EngineeringSemiconductor DeviceEngineeringThin-film TransistorLow-temperature Polysilicon	2001	50

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