Journal of Applied Physics · 2002 · 80 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportMetal-oxide-semiconductor Field-effect TransistorsMos CapacitorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsConduction BandInterface DensityInterface State ModelingInterface StatesMetal-semiconductor Field-effect TransistorsSilicon Carbide (Sic) MaterialsTemperature Dependence Of Electrical PropertiesThreshold Voltage
Temperature dependence of threshold voltage in n-channel SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) was studied. Linear relation was observed between the threshold voltage shift when the temperature varies from −150 to 150 °C and the number of the interface states present within the energy range of 0.2–0.4 eV from the conduction band edge energy Ec. This relationship revealed that the interface state profile near Ec in n-channel SiC MOSFETs can be represented by that in n-type SiC MOS capacitors. The relationship between the channel mobility and the interface state profile also suggested that the interface states within the energy range of 0.2–0.4 eV from Ec have little influence on the channel mobility.
12
Intrinsic SiC/SiO2 Interface States
V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 643 citations
Doping of SiC by Implantation of Boron and Aluminum
T. Troffer, M. Schadt, Thomas Frank et al. · physica status solidi (a) · 1997 · 294 citations