Keiko Ariyoshi

Publications

324

Citations

H-Index

2012

Active since

Affiliations

National Institute of Advanced Industrial Science and Technology(Current)

Toshiba (Japan)

Fuji Electric (Japan)

Keiko Ariyoshi is an author at National Institute of Advanced Industrial Science and Technology specializing in electrical engineering, microelectronics, and engineering.

Top concepts

EngineeringMicroelectronicsElectrical EngineeringApplied PhysicsNanoelectronicsPower ElectronicsHigh Voltage EngineeringMaterial ScienceSingle Event EffectsMaterials Engineering

Publications per year

2012–2020

Publications

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Shinsuke Harada, Yusuke Kobayashi, Keiko Ariyoshi et al. · IEEE Electron Device Letters · 2016 · 72 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation

Reika Ichihara, Kunifumi Suzuki, Haruka Kusai et al. · 2020 · 72 citations

Memory Operation, Electrical Engineering, Vth Window +12

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

Shinsuke Harada, Yusuke Kobayashi, Akimasa Kinoshita et al. · Materials science forum · 2017 · 53 citations

Electrical Engineering, Engineering, New Umosfet +12

Determination of optimum structure of 4H-SiC Trench MOSFET

Shinsuke Harada, Makoto Katō, Takahito Kojima et al. · 2012 · 49 citations

4H-sic Umosfet, Electrical Engineering, Engineering +11

Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET

Takahito Kojima, Shinsuke Harada, Yusuke Kobayashi et al. · Japanese Journal of Applied Physics · 2016 · 21 citations

Electrical Engineering, Ion Implantation, Engineering +11

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