Keiko Ariyoshi

Statistics

Publications

Citations

367

H-Index

Active since

2012

Affiliations

National Institute of Advanced Industrial Science and Technology(Current)

Toshiba (Japan)

Fuji Electric (Japan)

Keiko Ariyoshi is an author at National Institute of Advanced Industrial Science and Technology specializing in semiconductor devices, engineering, and electrical engineering.

Publications per year

2012–2020

Publications

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Shinsuke Harada, Yusuke Kobayashi, Keiko Ariyoshi et al. · IEEE Electron Device Letters · 2016 · 77 citations

Engineering, Electrical Engineering, Electronic Materials +13

Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation

Reika Ichihara, Kunifumi Suzuki, Haruka Kusai et al. · 2020 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

Shinsuke Harada, Yusuke Kobayashi, Akimasa Kinoshita et al. · Materials science forum · 2017 · 55 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +15

Determination of optimum structure of 4H-SiC Trench MOSFET

Shinsuke Harada, Makoto Katō, Takahito Kojima et al. · 2012 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

Metal-Assisted Solid-Phase Crystallization Process for Vertical Monocrystalline Si Channel in 3D Flash Memory

H. Miyagawa, Haruka Kusai, Riichiro Takaishi et al. · 2019 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

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