Akimasa Kinoshita

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

Shinsuke Harada, Yusuke Kobayashi, Akimasa Kinoshita et al. · Materials science forum · 2017 · 55 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +15

Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Bin Chen, Jun Chen, Takashi Sekiguchi et al. · Applied Physics Letters · 2008 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Evaluation of Schottky barrier height on 4H-SiC <i>m</i>-face $\{ 1\bar{1}00\} $ for Schottky barrier diode wall integrated trench MOSFET

Yusuke Kobayashi, Hiroshi Ishimori, Akimasa Kinoshita et al. · Japanese Journal of Applied Physics · 2017 · 43 citations

Engineering, Electrical Engineering, Materials Engineering +16

Pinning of recombination-enhanced dislocation motion in 4H–SiC: Role of Cu and EH1 complex

Bin Chen, Hirofumi Matsuhata, Takashi Sekiguchi et al. · Applied Physics Letters · 2010 · 36 citations

Engineering, Materials Engineering, Materials Science +17

Radiation effect on pn-SiC diode as a detector

Akimasa Kinoshita, Motohiro Iwami, K. Kobayashi et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2005 · 33 citations

Engineering, Electrical Engineering, Materials Science +14