Applied Physics Letters · 2008 · 45 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDefects In Electronic MaterialsDislocations In SemiconductorsSemiconductor DefectsSemiconductor HeterostructuresSemiconductor PhysicsStacking FaultsContrastDislocation Contrast ImagingDislocation PhysicsDislocationsPartial DislocationsStacking Fault EffectsStacking Fault FormationStacking Faults In Semiconductors
Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocations [Si(g) 30° and C(g) 30° partials], with a stacking fault between them. The EBIC contrast of C(g) 30° partial is always several percent higher than that of Si(g) 30° partial. The stacking fault is brighter than the background, having the negative EBIC contrast. CL spectrum shows that a new peak (417nm) appears at stacking fault position. The origin of bright stacking fault in EBIC image is discussed according to its quantum-well state.
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Degradation of hexagonal silicon-carbide-based bipolar devices
Marek Skowroński, S. Ha · Journal of Applied Physics · 2006 · 466 citations
Localized electronic states around stacking faults in silicon carbide
Hisaomi Iwata, U. Lindefelt, Sven Öberg et al. · Physical review. B, Condensed matter · 2001 · 107 citations