Takahito Kojima

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Shinsuke Harada, Yusuke Kobayashi, Keiko Ariyoshi et al. · IEEE Electron Device Letters · 2016 · 77 citations

Engineering, Electrical Engineering, Electronic Materials +13

Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS

Yusuke Kobayashi, Naoyuki Ohse, Tadao Morimoto et al. · 2017 · 75 citations

Engineering, Electrical Engineering, Electronic Materials +16

Determination of optimum structure of 4H-SiC Trench MOSFET

Shinsuke Harada, Makoto Katō, Takahito Kojima et al. · 2012 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

Evaluation of Schottky barrier height on 4H-SiC <i>m</i>-face $\{ 1\bar{1}00\} $ for Schottky barrier diode wall integrated trench MOSFET

Yusuke Kobayashi, Hiroshi Ishimori, Akimasa Kinoshita et al. · Japanese Journal of Applied Physics · 2017 · 43 citations

Engineering, Electrical Engineering, Materials Engineering +16

Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET

Takahito Kojima, Shinsuke Harada, Yusuke Kobayashi et al. · Japanese Journal of Applied Physics · 2016 · 22 citations

Engineering, Electrical Engineering, Low-power Design +16