Atsushi Shimozato

Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato et al. · Applied Physics Letters · 2006 · 79 citations

Materials Engineering, Materials Science, Basal Plane Dislocation +13

N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces

Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato et al. · AIP Advances · 2015 · 69 citations · Full text

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Junichiro Sameshima, Osamu Ishiyama, Atsushi Shimozato et al. · Materials science forum · 2013 · 52 citations

Semiconductor Technology, 4H-sic Epitaxial Surface, Electrical Engineering +11

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato et al. · Applied Physics Letters · 2014 · 47 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

Junji Senzaki, Takuma Suzuki, Atsushi Shimozato et al. · Materials science forum · 2010 · 28 citations

Materials Science, Materials Engineering, Chemical Engineering +14