Shigetoshi Hosaka

Formation of a manganese oxide barrier layer with thermal chemical vapor deposition for advanced large-scale integrated interconnect structure

Koji Neishi, Shiro Aki, Kenji Matsumoto et al. · Applied Physics Letters · 2008 · 50 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Performance and reliability improvement in SiC power MOSFETs by implementing AlON high-k gate dielectrics

Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi et al. · 2012 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures

Kenji Matsumoto, Koji Neishi, Hitoshi Itoh et al. · Applied Physics Express · 2009 · 23 citations

Engineering, Materials Engineering, Materials Science +16

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

Toshihiko Koseki, Takayuki Ohba, Tomohiro Ohta et al. · Applied Surface Science · 2005 · 23 citations

Engineering, Materials Engineering, Materials Science +16

Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition

Y. Kojima, Hiroshi Sato, Naoki Yoshii et al. · Japanese Journal of Applied Physics · 2006 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +16