Applied Physics Letters · 2008 · 50 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceMicrofabricationSurface ScienceThin FilmsChemical Vapor DepositionIntegrated Circuit DesignIntegrated Circuit FabricationInterconnect FormationInterconnect TechnologySemiconductor InterfacesBarrier Layer DepositionBarrier Layer FormationBarrier MaterialsDiffusion BarriersInterconnect FabricationTemperature Effects On DepositionThin Oxide FilmsThin Oxide Layers
Advanced large-scale integrated interconnect structure faces a major challenge in forming a thin and conformal diffusion barrier layer. We deposited a Mn oxide layer by thermal chemical vapor deposition (CVD) on SiO2 substrates and investigated deposition behavior and diffusion barrier property. A thin Mn oxide layer was formed with a uniform thickness of 2.6–10nm depending on deposition temperature between 100 and 400°C. Heat-treated samples of Cu/CVD-Mn oxide/SiO2 indicated no interdiffusion at 400°C for 100h. The CVD of the Mn oxide layer was found to be an excellent barrier formation process.
9