Self-forming diffusion barrier layer in Cu–Mn alloy metallization

Abstract

Advancement of semiconductor devices requires the realization of an ultrathin diffusion barrier layer between Cu interconnect and insulating layers. The present work investigated the possibility of the self-forming barrier layer in Cu–Mn alloy thin films deposited directly on SiO2. After annealing at 450 °C for 30 min, a Mn containing amorphous oxide layer of 3–4 nm in thickness was formed uniformly at the interface. Residual Mn atoms were removed to form a surface oxide layer, leading to a drastic resistivity decrease of the film. No interdiffusion was detected between Cu and SiO2 within the detection limit of x-ray energy dispersive spectroscopy.