Katsuhiro Kutsuki

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

Takuji Hosoi, Katsuhiro Kutsuki, Gaku Okamoto et al. · Applied Physics Letters · 2009 · 92 citations · Full text

Semiconductors, Organic Molecules, Electrical Engineering +14

Germanium oxynitride gate dielectrics formed by plasma nitridation of ultrathin thermal oxides on Ge(100)

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi et al. · Applied Physics Letters · 2009 · 59 citations · Full text

Oxide Heterostructures, Materials Science, Electrical Engineering +11

Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN

Daigo Kikuta, Tetsuo Narita, Katsuhiro Kutsuki et al. · Japanese Journal of Applied Physics · 2013 · 30 citations

Materials Science, Aluminium Nitride, Electrical Engineering +14

Characteristics of Pure Ge₃N₄ Dielectric Layers Formed by High-Density Plasma Nitridation

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi et al. · Japanese Journal of Applied Physics · 2008 · 26 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi et al. · Applied Physics Letters · 2007 · 23 citations

Materials Science, Aluminium Nitride, Surface Characterization +14