Defect engineering in SiC technology for high-voltage power devices

TLDR

Silicon carbide power devices provide high blocking voltage, low on‑state loss, and fast switching, and recent progress has enabled 600–3300 V MOSFETs and Schottky diodes that reduce system power loss, yet interface and bulk defects still limit performance and reliability. The review introduces the advantages and current status of SiC devices and then presents defect‑engineering strategies for these power devices. It discusses defects at the oxide/SiC interface and the expansion of single Shockley‑type stacking faults, and examines current physical understanding and efforts to reduce these defects and mitigate associated problems.

Abstract

Abstract Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-state loss, and fast switching, compared with those of the Si counterparts. Through recent progress in the material and device technologies of SiC, production of 600–3300 V class SiC unipolar devices such as power metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes has started, and the adoption of SiC devices has been demonstrated to greatly reduce power loss in real systems. However, the interface defects and bulk defects in SiC power MOSFETs severely limit the device performance and reliability. In this review, the advantages and present status of SiC devices are introduced and then defect engineering in SiC power devices is presented. In particular, two critical issues, namely defects near the oxide/SiC interface and the expansion of single Shockley-type stacking faults, are discussed. The current physical understanding as well as attempts to reduce these defects and to minimize defect-associated problems are reviewed.